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Triple Junction GaAs Solar Cell Assembly SC-3GA68-3

This cell type is an GaInP2 GaAs Ge on Ge substrate triple junction solar cell assembly (efficiency class 30%) The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass

 30% Triple Junction GaAs Junction Solar Cell Type: TJ Solar Cell SC-3GA68-3 Advanced (120mm x 60mm)

1. Design and Mechanical Data
Base Material GaInP2/GaAs/Ge on Ge substrate
AR-coating TiOX/Al2O3
Dimensions (120.1±0.1)mm×(60.1±0.1)mm
Cell Area 68.6cm2
Weight (165±15)mg/cm2225μm Ge substrate
Thickness 0.45±0.10mm225μm Ge substrate
Coverglass KFB 120
Coverglass thickness 120±20μm
Interconnectors (4× front side/1× diode) Kovar, silver coated
Interconnector thickness 25μm
       
2. Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) 2740
Average Short Circuit Jsc (mA/cm2) 17.1
Voltage@ Max. Power Vm (mV) 2410
Current@ Max. Power Jm (mA/cm2) 16.8
Average Efficiency ηbare (1353W/m2) 0.299
Average Efficiency ηbare (1367W/m2) 0.296
Average Fill Factor 0.85
StandardAM0, 1sun, 25  
       
3. Radiation Degradation ( Fluence 1MeV )
Parameters 1×1014e/cm2 5×1014e/cm2 1×1015e/cm2
Im/Im0 0.99 0.97 0.93
Vm/Vm0 0.96 0.93 0.92
Pm/Pm0 0.95 0.9 0.85
       
4. Acceptance Values (SCA )
Voltage VL 2350mV
Min. average current IL min @ VL 1150mA
Min. individual current IL ave @ VL 1140mA
   
5. Shadow Protection (Discrete bypass diode)
Vforward(1.4A) ≤1.0V
Ireverse(4.0V) ≤200μA
       
6. Temperature Coefficients (20℃65℃)
Parameters BOL 1 MeV, 5×1014e/cm2 1 MeV, 1×1015e/cm2
Jsc (μA/cm2/) 11 10 13
Voc (mV/) -5.9 -6.1 -6.3
Jm (μA/cm2/) 9 9.5 15
Vm (mV/) -6 -6.2 -6.5
       
7. Threshold Values
Absorptivity ≤ 0.92
Pull Test (at 45°) ≥0.83N/mm2

 

 

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