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This cell type is an GaInP2 GaAs Ge on Ge substrate triple junction solar cell assembly (efficiency class 30%) The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass
30% Triple Junction GaAs Junction Solar Cell Type: TJ Solar Cell SC-3GA68-3 Advanced (120mm x 60mm)
1. Design and Mechanical Data | |||
Base Material | GaInP2/GaAs/Ge on Ge substrate | ||
AR-coating | TiOX/Al2O3 | ||
Dimensions | (120.1±0.1)mm×(60.1±0.1)mm | ||
Cell Area | 68.6cm2 | ||
Weight | (165±15)mg/cm2(225μm Ge substrate) | ||
Thickness | 0.45±0.10mm(225μm Ge substrate) | ||
Coverglass | KFB 120 | ||
Coverglass thickness | 120±20μm | ||
Interconnectors (4× front side/1× diode) | Kovar, silver coated | ||
Interconnector thickness | 25μm | ||
2. Typical Electrical Parameters (SCA) | |||
Average Open Circuit Voc (mV) | 2740 | ||
Average Short Circuit Jsc (mA/cm2) | 17.1 | ||
Voltage@ Max. Power Vm (mV) | 2410 | ||
Current@ Max. Power Jm (mA/cm2) | 16.8 | ||
Average Efficiency ηbare (1353W/m2) | 0.299 | ||
Average Efficiency ηbare (1367W/m2) | 0.296 | ||
Average Fill Factor | 0.85 | ||
Standard:AM0, 1sun, 25℃ | |||
3. Radiation Degradation ( Fluence 1MeV ) | |||
Parameters | 1×1014e/cm2 | 5×1014e/cm2 | 1×1015e/cm2 |
Im/Im0 | 0.99 | 0.97 | 0.93 |
Vm/Vm0 | 0.96 | 0.93 | 0.92 |
Pm/Pm0 | 0.95 | 0.9 | 0.85 |
4. Acceptance Values (SCA ) | |||
Voltage VL | 2350mV | ||
Min. average current IL min @ VL | 1150mA | ||
Min. individual current IL ave @ VL | 1140mA | ||
5. Shadow Protection (Discrete bypass diode) | |||
Vforward(1.4A) | ≤1.0V | ||
Ireverse(4.0V) | ≤200μA | ||
6. Temperature Coefficients (20℃~65℃) | |||
Parameters | BOL | 1 MeV, 5×1014e/cm2 | 1 MeV, 1×1015e/cm2 |
Jsc (μA/cm2/℃) | 11 | 10 | 13 |
Voc (mV/℃) | -5.9 | -6.1 | -6.3 |
Jm (μA/cm2/℃) | 9 | 9.5 | 15 |
Vm (mV/℃) | -6 | -6.2 | -6.5 |
7. Threshold Values | |||
Absorptivity | ≤ 0.92 | ||
Pull Test (at 45°) | ≥0.83N/mm2 |